Measurements and modeling of intrinsic fluctuations in MOSFET threshold voltage

doi:10.1145/1077603.1077611

Measurements and modeling of intrinsic fluctuations in MOSFET threshold voltage

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Authors:	Ali Keshavarzi	Circuit Research Lab, Intel Corporation, Hillsboro, OR
	Gerhard Schrom	Circuit Research Lab, Intel Corporation, Hillsboro, OR
	Stephen Tang	Circuit Research Lab, Intel Corporation, Hillsboro, OR
	Sean Ma	University of Arizona, Tucson, AZ
	Keith Bowman	TCAD, Intel Corporation, Hillsboro, OR
	Sunit Tyagi	Portland Technology Development, Intel Corporation, Hillsboro, OR
	Kevin Zhang	Portland Technology Development, Intel Corporation, Hillsboro, OR
	Tom Linton	TCAD, Intel Corporation, Hillsboro, OR
	Nagib Hakim	TCAD, Intel Corporation, Hillsboro, OR
	Steven Duvall	TCAD, Intel Corporation, Hillsboro, OR
	John Brews	University of Arizona, Tucson, AZ
	Vivek De	Circuit Research Lab, Intel Corporation, Hillsboro, OR

	2005 Article
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	· Proceeding
	ISLPED '05 Proceedings of the 2005 international symposium on Low power electronics and design
	Pages 26-29 ACM New York, NY, USA ©2005 table of contents ISBN:1-59593-137-6 doi>10.1145/1077603.1077611

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