Temperature-independence-point properties for 0.1μm-scale pocket-implant technologies and the impact on circuit design

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Authors: K. Hisamitsu Graduate School of Advanced Sciences of Matter
H. Ueno Graduate School of Advanced Sciences of Matter
M. Tanaka Graduate School of Advanced Sciences of Matter
D. Kitamaru Graduate School of Advanced Sciences of Matter
M. Miura-Mattausch Graduate School of Advanced Sciences of Matter
H. J. Mattausch Hiroshima University, Higashi-Hiroshima, Japan
S. Kumashiro Semiconductor Technology Academic Research Center, Kanagawa, Japan
T. Yamaguchi Semiconductor Technology Academic Research Center, Kanagawa, Japan
K. Yamashita Semiconductor Technology Academic Research Center, Kanagawa, Japan
N. Nakayama Semiconductor Technology Academic Research Center, Kanagawa, Japan
Temperature-independence-point properties for 0.1μm-scale pocket-implant technologies and the impact on circuit design Published by ACM 2003 Article
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· Proceeding
ASP-DAC '03 Proceedings of the 2003 Asia and South Pacific Design Automation Conference
Pages 179 - 183
ACM New York, NY, USA ©2003
table of contents ISBN:0-7803-7660-9 doi>10.1145/1119772.1119807

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