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Ambipolar double-gate FETs for the design of compact logic structures
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Authors:
Kotb Jabeur
Lyon Institute of Nanotechnology University of Lyon, Ecole Centrale de Lyon, F-69134 Ecully, France
Ian O'Connor
Lyon Institute of Nanotechnology University of Lyon, Ecole Centrale de Lyon, F-69134 Ecully, France
Nataliya Yakymets
Lyon Institute of Nanotechnology University of Lyon, Ecole Centrale de Lyon, F-69134 Ecully, France
Sébastien Le Beux
Lyon Institute of Nanotechnology University of Lyon, Ecole Centrale de Lyon, F-69134 Ecully, France
2012 Article
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Published in:
· Proceeding
GLSVLSI '12
Proceedings of the great lakes symposium on VLSI
Pages 3-8
ACM
New York, NY
, USA
©2012
table of contents
ISBN: 978-1-4503-1244-8
doi>
10.1145/2206781.2206785
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Tags:
ambipolar double-gate devices
cntfets
combinational logic
design
emerging technologies
four-terminal devices
performance
static logic
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