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A power-optimized widely-tunable 5-GHz monolithic VCO in a digital SOI CMOS technology on high resistivity substrate
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Authors:
Jonghae Kim
IBM Semiconductor Research and Development Center, Hopewell Junction, NY
Jean-Olivier Plouchart
IBM Semiconductor Research and Development Center, Hopewell Junction, NY
Noah Zamdmer
IBM Semiconductor Research and Development Center, Hopewell Junction, NY
Melanie Sherony
IBM Semiconductor Research and Development Center, Hopewell Junction, NY
Yue Tan
IBM Semiconductor Research and Development Center, Hopewell Junction, NY
Meeyoung Yoon
IBM Semiconductor Research and Development Center, Hopewell Junction, NY
Robert Trzcinski
IBM Semiconductor Research and Development Center, Hopewell Junction, NY
Mohamed Talbi
IBM Semiconductor Research and Development Center, Hopewell Junction, NY
John Safran
IBM Semiconductor Research and Development Center, Hopewell Junction, NY
Asit Ray
IBM Semiconductor Research and Development Center, Hopewell Junction, NY
Lawrence Wagner
IBM Semiconductor Research and Development Center, Hopewell Junction, NY
2003 Article
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Published in:
· Proceeding
ISLPED '03
Proceedings of the 2003 international symposium on Low power electronics and design
Pages 434-439
ACM
New York, NY
, USA
©2003
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ISBN:1-58113-682-X
doi>
10.1145/871506.871614
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advanced technologies
design
high resistivity substrate
low power
phase noisefom
rf design
soi cmos
vco
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